BCY65E9 Specs and Replacement
Type Designator: BCY65E9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO18
BCY65E9 Substitution
- BJT ⓘ Cross-Reference Search
BCY65E9 datasheet
NO PDF data!
Detailed specifications: BCY59CSM, BCY59D, BCY59DP, BCY59QF, BCY65, BCY65E, BCY65E7, BCY65E8, BD135, BCY65EA, BCY65EB, BCY65EC, BCY65EP, BCY65EP-7, BCY65EP-8, BCY65EP-9, BCY65EPA
Keywords - BCY65E9 pdf specs
BCY65E9 cross reference
BCY65E9 equivalent finder
BCY65E9 pdf lookup
BCY65E9 substitution
BCY65E9 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent
