BCY71 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCY71
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO18
BCY71 Transistor Equivalent Substitute - Cross-Reference Search
BCY71 Datasheet (PDF)
bcy70 bcy71 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D361BCY70; BCY71PNP general purpose transistors1997 Jul 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BCY70; BCY71FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 e
bcy70 bcy71 bcy72.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can PackageGeneral Purpose Industrial Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCY70 BCY71 BCY72 UNITCollector Emitter Voltage VCEO 40 45 25 VCollector Base Voltage VCB
bcy71dcsm.pdf
SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package Designed For General Purpose Industrial Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector - Base Voltage -45V VCEO Collector - Emitter Voltage -45V VE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
