BCY88 Specs and Replacement
Type Designator: BCY88
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO71
BCY88 Substitution
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BCY88 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 FEATURES PINNING Low current (max. 30 mA) PIN(1) DESCRIPTION Low voltage (... See More ⇒
Detailed specifications: BCY85, BCY85A, BCY85B, BCY86, BCY86A, BCY86B, BCY86C, BCY87, 13009, BCY89, BCY90, BCY90B, BCY91, BCY91B, BCY92, BCY92B, BCY93
Keywords - BCY88 pdf specs
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History: ET425 | SS9012
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