BCY89 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BCY89 Specs and Replacement

Type Designator: BCY89

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO71

BCY89 Substitution

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BCY89 datasheet

..1. Size:52K philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 FEATURES PINNING Low current (max. 30 mA) PIN(1) DESCRIPTION Low voltage (... See More ⇒

Detailed specifications: BCY85A, BCY85B, BCY86, BCY86A, BCY86B, BCY86C, BCY87, BCY88, 2N3906, BCY90, BCY90B, BCY91, BCY91B, BCY92, BCY92B, BCY93, BCY93B