BCY89 Datasheet and Replacement
Type Designator: BCY89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO71
BCY89 Substitution
BCY89 Datasheet (PDF)
bcy87 bcy88 bcy89 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D126BCY87; BCY88; BCY89NPN general purpose transistors1997 Jun 20Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BCY87; BCY88; BCY89FEATURES PINNING Low current (max. 30 mA)PIN(1) DESCRIPTION Low voltage (
Datasheet: BCY85A , BCY85B , BCY86 , BCY86A , BCY86B , BCY86C , BCY87 , BCY88 , 13003 , BCY90 , BCY90B , BCY91 , BCY91B , BCY92 , BCY92B , BCY93 , BCY93B .
Keywords - BCY89 transistor datasheet
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History: BDY82 | KRC234M



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