BCY89 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCY89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO71
BCY89 Transistor Equivalent Substitute - Cross-Reference Search
BCY89 Datasheet (PDF)
..1. Size:52K philips
bcy87 bcy88 bcy89 cnv 2.pdf
bcy87 bcy88 bcy89 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D126BCY87; BCY88; BCY89NPN general purpose transistors1997 Jun 20Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BCY87; BCY88; BCY89FEATURES PINNING Low current (max. 30 mA)PIN(1) DESCRIPTION Low voltage (
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
