BD130Y Specs and Replacement
Type Designator: BD130Y
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BD130Y Substitution
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BD130Y datasheet
BD130 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO- 3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 60 V Collector-Base Voltage VCBO 100 ... See More ⇒
BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 ( s) 2.5-3 ( s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 ( s) 3.5... See More ⇒
WBD13003D WBD13003D WBD13003D WBD13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such... See More ⇒
Detailed specifications: BD121, BD123, BD124, BD124A, BD127, BD128, BD129, BD130, MPSA42, BD131, BD131A, BD132, BD132A, BD133, BD135, BD135-10, BD135-16
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