All Transistors. BD138-6 Datasheet

 

BD138-6 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD138-6

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

BD138-6 Transistor Equivalent Substitute - Cross-Reference Search

 

BD138-6 Datasheet (PDF)

9.1. bd136 bd138 bd140-10 bd136 bd138 bd140.pdf Size:104K _motorola

BD138-6
BD138-6

Order this documentMOTOROLAby BD136/DSEMICONDUCTOR TECHNICAL DATABD136BD138Plastic Medium Power SiliconBD140PNP TransistorBD140-10. . . designed for use as audio amplifiers and dr

9.2. bd136 bd138 bd140.pdf Size:49K _philips

BD138-6
BD138-6

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D100BD136; BD138; BD140PNP power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationPNP power transistors BD136; BD138; BD140FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to met

 9.3. bd136 bd138 bd140.pdf Size:44K _st

BD138-6
BD138-6

BD136BD138/BD140PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORDESCRIPTIONThe BD136, BD138 and BD140 are siliconepitaxial planar PNP transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.12The complementary NPN types are the BD1353BD137 and BD139.SOT-32I

9.4. bd136 bd138 bd140.pdf Size:41K _fairchild_semi

BD138-6
BD138-6

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :

 9.5. bd138.pdf Size:79K _secos

BD138-6
BD138-6

BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 AProduct-Rank BD138-6 BD138-10 BD138-16 BEFProduct-Rank BD140-

9.6. bd136 bd138 bd140.pdf Size:175K _cdil

BD138-6
BD138-6

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138BD140TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD135, BD137, BD139ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD136 BD138 BD140 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

9.7. bd136 bd138 bd140.pdf Size:167K _lge

BD138-6
BD138-6

BD136/BD138/BD140(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters)2.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.4002.9001.1007.8001.500Units Value 3.9003.000Symbol Parameter 4.1003.200BD135 BD137 BD13910.6000.00011.000

9.8. stbd136t stbd138t stbd140t.pdf Size:367K _semtech

BD138-6
BD138-6

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T-VCBO Collector Base Voltage 45 60 100 V-VCEO Collector Emitter Voltage 45 60 80 V-VEBO Emitter Base Voltage 5 VCollector Current -IC 1.5 ABase Cur

9.9. hsbd138.pdf Size:119K _shantou-huashan

BD138-6

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

9.10. 3ca138 bd138.pdf Size:132K _china

BD138-6

3CA138(BD138) PNP PCM TC70 8 W ICM 2 A Tjm 150 Tstg -55~150 VCE=10V Rth 10 /W IC=0.7A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A IC=0.5A VCEsat 0.5 V

9.11. bd136 bd138 bd140.pdf Size:119K _inchange_semiconductor

BD138-6
BD138-6

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta

9.12. bd138.pdf Size:210K _inchange_semiconductor

BD138-6
BD138-6

isc Silicon PNP Power Transistor BD138DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -60V(Min)CEO(SUS)Complement to type BD137Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi compleme

Datasheet: BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G , BD138 , BD138-10 , BC557 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G , BD140 , BD140-10 .

 

 
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