BD138G Specs and Replacement
Type Designator: BD138G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
BD138G datasheet
..1. Size:173K onsemi
bd136g bd138g bd140g.pdf 
BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. www.onsemi.com Features High DC Current Gain 1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON ... See More ⇒
9.1. Size:104K motorola
bd136 bd138 bd140-10 bd136 bd138 bd140.pdf
Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POW... See More ⇒
9.2. Size:49K philips
bd136 bd138 bd140.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to met... See More ⇒
9.3. Size:44K st
bd136 bd138 bd140.pdf
BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 I... See More ⇒
9.4. Size:74K st
bd136 bd136-10 bd136-16 bd138 bd140 bd140-10 bd140-16.pdf
BD136 BD138/BD140 PNP SILICON TRANSISTORS Type Marking BD136 BD136 BD136-10 BD136-10 BD136-16 BD136-16 BD138 BD138 BD140 BD140 BD140-10 BD140-10 1 BD140-16 BD140-16 2 3 STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR SOT-32 DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for... See More ⇒
9.5. Size:41K fairchild semi
bd136 bd138 bd140.pdf
BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage ... See More ⇒
9.6. Size:40K onsemi
bd136 bd138 bd140.pdf
BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage ... See More ⇒
9.8. Size:79K secos
bd138.pdf
BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 A Product-Rank BD138-6 BD138-10 BD138-16 B E F Product-Rank BD140-... See More ⇒
9.9. Size:175K cdil
bd136 bd138 bd140.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col... See More ⇒
9.10. Size:437K jiangsu
bd136 bd138 bd140.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136 / BD138 / BD140 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER High Current Complement To BD135, BD137 And BD139 2. COLLECTOR 3. BASE Equivalent Circuit Equivalent Circuit BD136 BD138 BD140 XX XX XX BD136,BD138,BD140=Device code Solid dot = Green molding compo... See More ⇒
9.11. Size:167K lge
bd136 bd138 bd140.pdf
BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000 ... See More ⇒
9.12. Size:367K semtech
stbd136t stbd138t stbd140t.pdf
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur... See More ⇒
9.13. Size:119K shantou-huashan
hsbd138.pdf
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
9.14. Size:132K china
3ca138 bd138.pdf
3CA138(BD138) PNP PCM TC 70 8 W ICM 2 A Tjm 150 Tstg -55 150 VCE=10V Rth 10 /W IC=0.7A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A IC=0.5A VCEsat 0.5 V ... See More ⇒
9.15. Size:119K inchange semiconductor
bd136 bd138 bd140.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta... See More ⇒
9.16. Size:210K inchange semiconductor
bd138.pdf
isc Silicon PNP Power Transistor BD138 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -60V(Min) CEO(SUS) Complement to type BD137 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi compleme... See More ⇒
Detailed specifications: BD137, BD137-10, BD137-16, BD137-6, BD137G, BD138, BD138-10, BD138-6, 2N5401, BD139, BD139-10, BD139-16, BD139-6, BD139G, BD140, BD140-10, BD140-16
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