All Transistors. BD139 Datasheet

 

BD139 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD139
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126

 BD139 Transistor Equivalent Substitute - Cross-Reference Search

   

BD139 Datasheet (PDF)

 ..1. Size:100K  motorola
bd135 bd137 bd139.pdf

BD139 BD139

Order this documentMOTOROLAby BD135/DSEMICONDUCTOR TECHNICAL DATABD135BD137Plastic Medium Power SiliconBD139NPN Transistor. . . designed for use as audio amplifiers and drivers util

 ..2. Size:49K  philips
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BD139 BD139

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD135; BD137; BD139NPN power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistors BD135; BD137; BD139FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to m

 ..3. Size:44K  st
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BD139 BD139

BD135BD137/BD139NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD135, BD137 and BD139 are siliconepitaxial planar NPN transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.The complementary PNP types are the BD13612BD138 and BD140.3SOT-32INTERNAL SCHEMATIC

 ..4. Size:141K  st
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BD139 BD139

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

 ..5. Size:155K  st
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BD139 BD139

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

 ..6. Size:74K  st
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BD139 BD139

BD135BD139NPN SILICON TRANSISTORSType MarkingBD135 BD135BD135-10 BD135-10BD135-16 BD135-16BD139 BD139BD139-10 BD139-10BD139-16 BD139-1612 STMicroelectronics PREFERRED3SALESTYPESSOT-32DESCRIPTION The BD135 and BD139 are silicon EpitaxialPlanar NPN transistors mounted in JedecSOT-32 plastic package, designed for audioamplifiers and drivers utilizing com

 ..7. Size:41K  fairchild semi
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BD139 BD139

BD135/137/139Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135

 ..8. Size:51K  samsung
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BD139 BD139

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Bas

 ..9. Size:196K  onsemi
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BD139 BD139

BD135 / 137 / 139NPN Epitaxial Silicon TransistorFeatures Complement to BD136, BD138 and BD140 respectivelyApplications Medium Power Linear and SwitchingTO-12611. Emitter 2.Collector 3.BaseOrdering InformationPart Number Marking Package Packing MethodBD13516S BD135-16 BulkBD1356STU BD135-6BD13510STU BD135-10BD13516STU BD135-16 RailBD13716STU BD137-16BD13710

 ..10. Size:135K  utc
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BD139 BD139

UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) 1* Low voltage (max.80V) TO-2511TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD139L-xx-T60-K BD139G-xx-T60-K TO-126 E C B BulkBD139L-xx-TM3-T BD139G-xx-TM3-T TO-251 B C E TubeBD139L-xx

 ..11. Size:246K  cdil
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BD139 BD139

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137BD139TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD136, BD138, BD140ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD135 BD137 BD139 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

 ..12. Size:931K  jiangsu
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BD139 BD139

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD135 / BD137 / BD139 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER High Current Complement To BD136, BD138 And BD140 2. COLLECTOR3. BASE Equivalent Circuit BD135 BD137 BD139 XX XX XXBD135,BD137,BD139=Device code Solid dot = Green molding compound device, if none,

 ..13. Size:31K  kec
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BD139 BD139

SEMICONDUCTOR BD139TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ABDCFEATURESEHigh Current. (Max. : 1.5A)FDC Current Gain : hFE=40Min. @IC=0.15AComplementary to BD140.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25)E 3.5_+F 11.0 0.3CHARACTERISTIC SYMBOL RATING UNITG 2.9 M

 ..14. Size:191K  lge
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BD139 BD139

BD135/BD137/BD139(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(1.5A) Low Voltage(80V) 2.5007.400 Dimensions in inches and (millimeters)2.9001.100MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.8001.500Va3.900lue 3.000Symbol Parameter 4.100 Units 3.200BD135 BD137 BD13910.6000.00011.0000

 ..15. Size:329K  wietron
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BD139 BD139

BD135/137/139NPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126ABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol BD135 BD137 BD139 UnitVCBO45 60 80 VCollector-Emitter VoltageVCEO45 60 80 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 5.0 VCollector Current IC1.5 APD1.25 WPower DisspationTj150 CJu

 ..16. Size:813K  slkor
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BD139 BD139

BD139NPN Silicon NPN transistor / DescriptionsTO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features / Applications BD140 Complement to BD140 Medium power linear and switching applications / Equivalent Circuit

 ..17. Size:207K  inchange semiconductor
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BD139 BD139

isc Silicon NPN Power Transistor BD139DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complement

 ..18. Size:117K  inchange semiconductor
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BD139 BD139

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (T

 0.1. Size:128K  onsemi
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BD139 BD139

BD135G, BD137G, BD139GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.http://onsemi.comFeatures1.5 A POWER TRANSISTORS High DC Current GainNPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

 0.2. Size:80K  onsemi
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BD139 BD139

BD135G, BD137G, BD139GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.http://onsemi.comFeatures1.5 A POWER TRANSISTORS High DC Current GainNPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

 0.3. Size:196K  onsemi
bd13516s bd1356stu bd13510stu bd13516stu bd13716stu bd13710stu bd13716s bd13916stu bd13910s bd13916s bd1396stu bd13910stu.pdf

BD139 BD139

BD135 / 137 / 139NPN Epitaxial Silicon TransistorFeatures Complement to BD136, BD138 and BD140 respectivelyApplications Medium Power Linear and SwitchingTO-12611. Emitter 2.Collector 3.BaseOrdering InformationPart Number Marking Package Packing MethodBD13516S BD135-16 BulkBD1356STU BD135-6BD13510STU BD135-10BD13516STU BD135-16 RailBD13716STU BD137-16BD13710

 0.4. Size:80K  secos
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BD139 BD139

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE (1) AProduct-Rank BD135-6 BD135-10 BD135-16 BEFProduct-Rank BD13

 0.5. Size:454K  semtech
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BD139 BD139

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139TCollector Emitter Voltage VCEO 45 60 80 VCollector Emitter Voltage ( RBE = 1 K) VCER 45 60 100 VCollector Base Vo

 0.6. Size:59K  shantou-huashan
hsbd139.pdf

BD139 BD139

NPN SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD139 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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