BD139G PDF and Equivalents Search

 

BD139G Specs and Replacement


   Type Designator: BD139G
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
 

 BD139G Substitution

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BD139G datasheet

 ..1. Size:128K  onsemi
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BD139G

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14... See More ⇒

 ..2. Size:80K  onsemi
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BD139G

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14... See More ⇒

 9.1. Size:100K  motorola
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BD139G

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with... See More ⇒

 9.2. Size:49K  philips
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BD139G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to m... See More ⇒

Detailed specifications: BD138 , BD138-10 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BC337 , BD140 , BD140-10 , BD140-16 , BD140-6 , BD140G , BD141 , BD142 , BD142-4 .

History: BC337BP | 2SC2746 | BC327A | CSD363R | 2SB140

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