BD140 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby BD136/DSEMICONDUCTOR TECHNICAL DATABD136BD138Plastic Medium Power SiliconBD140PNP TransistorBD140-10. . . designed for use as audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139POW

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D100BD136; BD138; BD140PNP power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationPNP power transistors BD136; BD138; BD140FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to met

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

BD136BD138/BD140PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORDESCRIPTIONThe BD136, BD138 and BD140 are siliconepitaxial planar PNP transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.12The complementary NPN types are the BD1353BD137 and BD139.SOT-32I

BD136BD138/BD140PNP SILICON TRANSISTORSType MarkingBD136 BD136BD136-10 BD136-10BD136-16 BD136-16BD138 BD138BD140 BD140BD140-10 BD140-101BD140-16 BD140-1623 STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTOR SOT-32DESCRIPTION The BD136, BD138 and BD140 are siliconEpitaxial Planar PNP transistors mounted inJedec SOT-32 plastic package, designed for

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138BD140TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD135, BD137, BD139ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD136 BD138 BD140 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD136 / BD138 / BD140 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER High Current Complement To BD135, BD137 And BD139 2. COLLECTOR3. BASE Equivalent Circuit Equivalent Circuit BD136 BD138 BD140 XX XX XXBD136,BD138,BD140=Device code Solid dot = Green molding compo

SEMICONDUCTOR BD140TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ABDCFEATURESEHigh Current. (Max. : -1.5A)FDC Current Gain : hFE=40Min. @IC=-0.15AComplementary to BD139.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25)E 3.5_+F 11.0 0.3CHARACTERISTIC SYMBOL RATING UNITG 2.9

BD136/BD138/BD140(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters)2.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.4002.9001.1007.8001.500Units Value 3.9003.000Symbol Parameter 4.1003.200BD135 BD137 BD13910.6000.00011.000

BD140PNP Silicon PNP transistor / DescriptionsTO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features / Applications BD139 Complement to BD139 Medium power linear and switching applications / Equivalent Circuit

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD140DESCRIPTIONDC Current Gain-: h = 63(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -80V(Min)CEO(SUS)Complement to type BD139Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplem

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta

BD136G, BD138G, BD140GPlastic Medium-PowerSilicon PNP TransistorsThis series of plastic, medium-power silicon PNP transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.www.onsemi.comFeatures High DC Current Gain1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139PNP SILICON

PNP Epitaxial SiliconTransistorBD136 SeriesBD136 / BD138 / BD140Applicationswww.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free DevicesABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Max UnitCollector-Base Voltage VCBO VBD136 -45BD138 -60TO-126BD140 -80CASE 340AS1 2 3Collector-Emitter Voltage VCEO V

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T-VCBO Collector Base Voltage 45 60 100 V-VCEO Collector Emitter Voltage 45 60 80 V-VEBO Emitter Base Voltage 5 VCollector Current -IC 1.5 ABase Cur

PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25