BD140 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD140
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
BD140 Transistor Equivalent Substitute - Cross-Reference Search
BD140 Datasheet (PDF)
0.1. bd136 bd138 bd140-10 bd136 bd138 bd140.pdf 
Size:104K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y B D 1 3 6 / D S E M I C O N D U C T O R T E C H N I C A L D A T A B D 1 3 6 B D 1 3 8 P l a s t i c M e d i u m P o w e r S i l i c o n B D 1 4 0 P N P T r a n s i s t o r B D 1 4 0 - 1 0 . . . d e s i g n e d f o r u s e a s a u d i o a m p l i f i e r s a n d d r
0.2. bd136 bd138 bd140.pdf Size:49K _philips
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current (max. 1.5 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter 2 collector, connected to met
0.3. bd136 bd138 bd140.pdf Size:44K _st
BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 I
0.4. bd135 bd136 bd139 bd140.pdf Size:155K _st
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ
0.5. bd136 bd138 bd140.pdf Size:41K _fairchild_semi
BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :
0.6. bd136 bd138 bd140.pdf Size:175K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col
0.7. bd140.pdf Size:31K _kec
SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E ·High Current. (Max. : -1.5A) F ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D Φ3.2 0.1 MAXIMUM RATING (Ta=25℃) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9
0.8. bd136 bd138 bd140.pdf Size:167K _lge
BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000
0.9. stbd136t stbd138t stbd140t.pdf Size:367K _semtech
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur
0.10. hsbd140.pdf Size:62K _shantou-huashan
PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃ PC——Collector Dissipation（Tc=25℃）⋯⋯⋯⋯⋯
0.11. bd136 bd138 bd140.pdf Size:119K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION · ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta
0.12. bd140.pdf Size:215K _inchange_semiconductor
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD140 DESCRIPTION ·DC Current Gain- : h = 63(Min)@ I = -0.15A FE C ·Collector-Emitter Sustaining Voltage - : V = -80V(Min) CEO(SUS) ·Complement to type BD139 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complem
Datasheet: BD138-10 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G , C1815 , BD140-10 , BD140-16 , BD140-6 , BD140G , BD141 , BD142 , BD142-4 , BD142-5 .
