BD140 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD140
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BD140 Transistor Equivalent Substitute - Cross-Reference Search
BD140 Datasheet (PDF)
0.1. bd136 bd138 bd140-10 bd136 bd138 bd140.pdf 
Size:104K _motorola
Order this documentMOTOROLAby BD136/DSEMICONDUCTOR TECHNICAL DATABD136BD138Plastic Medium Power SiliconBD140PNP TransistorBD140-10. . . designed for use as audio amplifiers and dr
0.2. bd136 bd138 bd140.pdf Size:49K _philips
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D100BD136; BD138; BD140PNP power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationPNP power transistors BD136; BD138; BD140FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to met
0.3. bd136 bd138 bd140.pdf Size:44K _st
BD136BD138/BD140PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORDESCRIPTIONThe BD136, BD138 and BD140 are siliconepitaxial planar PNP transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.12The complementary NPN types are the BD1353BD137 and BD139.SOT-32I
0.4. bd135 bd136 bd139 bd140.pdf Size:155K _st
BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ
0.5. bd136 bd138 bd140.pdf Size:41K _fairchild_semi
BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :
0.6. bd136 bd138 bd140.pdf Size:175K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138BD140TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD135, BD137, BD139ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD136 BD138 BD140 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol
0.7. bd140.pdf Size:31K _kec
SEMICONDUCTOR BD140TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ABDCFEATURESEHigh Current. (Max. : -1.5A)FDC Current Gain : hFE=40Min. @IC=-0.15AComplementary to BD139.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25)E 3.5_+F 11.0 0.3CHARACTERISTIC SYMBOL RATING UNITG 2.9
0.8. bd136 bd138 bd140.pdf Size:167K _lge
BD136/BD138/BD140(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters)2.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.4002.9001.1007.8001.500Units Value 3.9003.000Symbol Parameter 4.1003.200BD135 BD137 BD13910.6000.00011.000
0.9. stbd136t stbd138t stbd140t.pdf Size:367K _semtech
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T-VCBO Collector Base Voltage 45 60 100 V-VCEO Collector Emitter Voltage 45 60 80 V-VEBO Emitter Base Voltage 5 VCollector Current -IC 1.5 ABase Cur
0.10. hsbd140.pdf Size:62K _shantou-huashan
PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
0.11. bd136 bd138 bd140.pdf Size:119K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta
0.12. bd140.pdf Size:215K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD140DESCRIPTIONDC Current Gain-: h = 63(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -80V(Min)CEO(SUS)Complement to type BD139Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplem
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
