BD175-10 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD175-10 Specs and Replacement

Type Designator: BD175-10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO126

BD175-10 Substitution

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BD175-10 datasheet

9.1. Size:37K fairchild semi

bd175 bd177 bd179.pdf pdf_icon

BD175/177/179 Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD175 45 V BD177 60 V BD179 80 V VCEO Collector-Emitter Voltage BD175 45 V ... See More ⇒

9.2. Size:853K onsemi

bd175 bd177 bd179.pdf pdf_icon

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9.3. Size:217K cdil

bd175 bd176 bd177 bd178 bd179 bd180.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE... See More ⇒

9.4. Size:122K shantou-huashan

hsbd175.pdf pdf_icon

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD175 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒