All Transistors. BD175-10 Datasheet

 

BD175-10 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD175-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO126

 BD175-10 Transistor Equivalent Substitute - Cross-Reference Search

   

BD175-10 Datasheet (PDF)

 9.1. Size:37K  fairchild semi
bd175 bd177 bd179.pdf

BD175-10 BD175-10

BD175/177/179Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD175 45 V : BD177 60 V : BD179 80 V VCEO Collector-Emitter Voltage : BD175 45 V

 9.2. Size:853K  onsemi
bd175 bd177 bd179.pdf

BD175-10 BD175-10

 9.3. Size:217K  cdil
bd175 bd176 bd177 bd178 bd179 bd180.pdf

BD175-10 BD175-10

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBD176 EPITAXIAL SILICON POWER TRANSISTORS BD175BD178BD177BD180BD179NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD175 BD177 BD179 UNITBD176 BD178 BD180Collector -Emitter Voltage VCE

 9.4. Size:122K  shantou-huashan
hsbd175.pdf

BD175-10

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD175 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.5. Size:211K  inchange semiconductor
bd175.pdf

BD175-10 BD175-10

isc Silicon NPN Power Transistor BD175DESCRIPTIONDC Current Gain-: h = 40-250(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 45V(Min)CEO(SUS)Complement to type BD176Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T

 9.6. Size:123K  inchange semiconductor
bd175 bd177 bd179.pdf

BD175-10 BD175-10

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION With TO-126 package Complement to type BD176/178 /180 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CON

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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