BD177 Specs and Replacement
Type Designator: BD177
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BD177 Substitution
- BJT ⓘ Cross-Reference Search
BD177 datasheet
BD175/177/179 Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD175 45 V BD177 60 V BD179 80 V VCEO Collector-Emitter Voltage BD175 45 V ... See More ⇒
bd175 bd176 bd177 bd178 bd179 bd180.pdf ![]()
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE... See More ⇒
isc Silicon NPN Power Transistor BD177 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 60V(Min) CEO(SUS) Complement to type BD178 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
Detailed specifications: BD175, BD175-10, BD175-16, BD175-6, BD176, BD176-10, BD176-16, BD176-6, BC549, BD177-10, BD177-6, BD178, BD178-10, BD178-6, BD179, BD179-10, BD179-6
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