2N1012 Specs and Replacement
Type Designator: 2N1012
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 35 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 180 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N1012 Substitution
- BJT ⓘ Cross-Reference Search
2N1012 datasheet
Detailed specifications: 2N1008, 2N1008A, 2N1008B, 2N1009, 2N101, 2N1010, 2N1011, 2N101-13, BC546, 2N1013, 2N1014, 2N1015, 2N1015A, 2N1015B, 2N1015C, 2N1015D, 2N1015E
Keywords - 2N1012 pdf specs
2N1012 cross reference
2N1012 equivalent finder
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History: NSV40300MZ4T1G
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