All Transistors. 2N2852-1 Datasheet

 

2N2852-1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N2852-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.85 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 125 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: MT27

 2N2852-1 Transistor Equivalent Substitute - Cross-Reference Search

   

2N2852-1 Datasheet (PDF)

 9.1. Size:433K  rca
2n2857.pdf

2N2852-1

 9.2. Size:62K  central
2n2857 2n3839.pdf

2N2852-1

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:197K  semelab
2n2857c1b.pdf

2N2852-1 2N2852-1

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 9.4. Size:196K  semelab
2n2857c1.pdf

2N2852-1 2N2852-1

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 9.5. Size:197K  semelab
2n2857c1a.pdf

2N2852-1 2N2852-1

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 9.6. Size:13K  semelab
2n2857.pdf

2N2852-1 2N2852-1

2N2857MECHANICAL DATADimensions in mm (inches)NPN TRANSISTOR4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR0.48 (0.019)APPLICATIONS:0.41 (0.016)dia. AMPLIFIER, OSCILLATOR ANDCONVERTER APPLICATIONS UP TO500MHz2.54 (0.100)Nom.43 12TO-72 METAL PACKAGEABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VC

 9.7. Size:10K  semelab
2n2857dcsm.pdf

2N2852-1

2N2857DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 30V CEO6.22 0.13 A = 1.27 0.13I = 0.04A C(0.

Datasheet: 2N2850 , 2N2850-1 , 2N2850-3 , 2N2851 , 2N2851-1 , 2N2851-2 , 2N2851-3 , 2N2852 , TIP142 , 2N2852-2 , 2N2852-3 , 2N2853 , 2N2853-1 , 2N2853-2 , 2N2853-3 , 2N2854 , 2N2854-1 .

 

 
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