2N2852-3 Specs and Replacement
Type Designator: 2N2852-3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: MT27
2N2852-3 Substitution
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2N2852-3 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒
Detailed specifications: 2N2850-3 , 2N2851 , 2N2851-1 , 2N2851-2 , 2N2851-3 , 2N2852 , 2N2852-1 , 2N2852-2 , 2SD669 , 2N2853 , 2N2853-1 , 2N2853-2 , 2N2853-3 , 2N2854 , 2N2854-1 , 2N2854-2 , 2N2854-3 .
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