All Transistors. BD214 Datasheet

 

BD214 Datasheet and Replacement


   Type Designator: BD214
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TOP3
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BD214 Datasheet (PDF)

 ..1. Size:177K  inchange semiconductor
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BD214

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD214DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NB311Z | TIP537 | OC1070 | RCA122 | 40451 | BSP15 | KTB1369

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