BD214-60 Specs and Replacement
Type Designator: BD214-60
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TOP3
BD214-60 Substitution
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BD214-60 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD214 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA... See More ⇒
Detailed specifications: BD213 , BD213-45 , BD213-60 , BD213-80 , BD213B , BD213C , BD214 , BD214-45 , 2SC4793 , BD214-80 , BD214B , BD214C , BD215 , BD216 , BD220 , BD221 , BD222 .
Keywords - BD214-60 pdf specs
BD214-60 cross reference
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History: BD208 | MJB45H11
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