BD224 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD224
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 130 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD224 Transistor Equivalent Substitute - Cross-Reference Search
BD224 Datasheet (PDF)
bd224.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD224DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEODC Current Gain -h =30(Min)@ I = -0.3AFE CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amp
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .