All Transistors. BD226-10 Datasheet

 

BD226-10 Datasheet and Replacement


   Type Designator: BD226-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO126
 

 BD226-10 Substitution

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BD226-10 Datasheet (PDF)

 9.1. Size:142K  inchange semiconductor
 bd226 bd228 bd230.pdf pdf_icon

BD226-10

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD226 45 VCBO Collector-Base Voltage BD228 60 V B

Datasheet: BD216 , BD220 , BD221 , BD222 , BD223 , BD224 , BD225 , BD226 , 2SC945 , BD226-16 , BD226-6 , BD227 , BD227-10 , BD227-16 , BD227-6 , BD228 , BD228-10 .

History: BD236G

Keywords - BD226-10 transistor datasheet

 BD226-10 cross reference
 BD226-10 equivalent finder
 BD226-10 lookup
 BD226-10 substitution
 BD226-10 replacement

 

 
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