BD231-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD231-10
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO126
BD231-10 Transistor Equivalent Substitute - Cross-Reference Search
BD231-10 Datasheet (PDF)
bd231.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD231PNP power transistor1999 Apr 21Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationPNP power transistor BD231FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mou
bd231.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD231 DESCRIPTION With TO-126 package Complement to type BD230 High current (Max:-1.5A) Low voltage (Max: -80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PAR
bd227 bd229 bd231.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD227 -45 VCBO Collector-Base Voltage BD229 -60 V
Datasheet: BD229-10 , BD229-16 , BD229-6 , BD230 , BD230-10 , BD230-16 , BD230-6 , BD231 , 2SD669 , BD231-16 , BD231-6 , BD232 , BD232G , BD233 , BD233-10 , BD233-16 , BD233-6 .
