All Transistors. BD239D Datasheet

 

BD239D Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD239D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BD239D Transistor Equivalent Substitute - Cross-Reference Search

   

BD239D Datasheet (PDF)

 9.1. Size:79K  st
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BD239D BD239D

BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb

 9.2. Size:27K  fairchild semi
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BD239D BD239D

BD239/A/B/CMedium Power Linear and Switching Applications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD239 45 V: BD239A 60 V: BD239B 80 V: BD239C 100 V VCER Collector-Emitter Voltage:

 9.3. Size:146K  onsemi
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BD239D BD239D

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:71K  cdil
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BD239D BD239D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD239, BD239A, BD239B, BD239CBD240, BD240A, BD240B, BD240CBD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORSBD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER

 9.5. Size:119K  inchange semiconductor
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BD239D BD239D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION With TO-220C package Complement to type BD240/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

 9.6. Size:212K  inchange semiconductor
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BD239D BD239D

isc Silicon NPN Power Transistor BD239/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.2AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD239; 60V(Min)- BD239ACEO(SUS)80V(Min)- BD239B; 100V(Min)- BD239CComplement to Type BD240/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium powe

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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