All Transistors. BD240B Datasheet

 

BD240B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD240B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BD240B Transistor Equivalent Substitute - Cross-Reference Search

   

BD240B Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
bd240 bd240a bd240b bd240c.pdf

BD240B
BD240B

isc Silicon PNP Power Transistor BD240/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.2AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD240; -60V(Min)- BD240ACEO(SUS)-80V(Min)- BD240B; -100V(Min)- BD240CComplement to Type BD239/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium

 9.1. Size:79K  st
bd239c bd240c.pdf

BD240B
BD240B

BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb

 9.2. Size:27K  fairchild semi
bd240 a b c.pdf

BD240B
BD240B

BD240/A/B/CMedium Power Linear and Switching Applications Complement to BD239/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Base Voltage: BD240 - 45 V: BD240A - 60 V: BD240B - 80 V: BD240C - 100 V VCER Collector-Emitter Volta

 9.3. Size:132K  cdil
bd240c.pdf

BD240B
BD240B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C(BPL)TO-220Complementary Silicon transistor Intended For A Wide Variety Of Switching & AmplifierApplications,Series And Shunt Regulators, Driver And Output Stages of HI-FI AmplifiersABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNI

 9.4. Size:71K  cdil
bd239 a b c bd240.pdf

BD240B
BD240B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD239, BD239A, BD239B, BD239CBD240, BD240A, BD240B, BD240CBD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORSBD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER

 9.5. Size:86K  power-innovations
bd240.pdf

BD240B
BD240B

BD240, BD240A, BD240B, BD240CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 SeriesTO-220 PACKAGE(TOP VIEW) 30 W at 25C Case Temperature 2 A Continuous Collector CurrentB 1C 2 4 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in ele

 9.6. Size:119K  inchange semiconductor
bd240 a b c.pdf

BD240B
BD240B

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD240/A/B/C DESCRIPTION With TO-220C package Complement to type BD239/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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