2N2855 Specs and Replacement

Type Designator: 2N2855

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.85 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO62

 2N2855 Substitution

- BJT ⓘ Cross-Reference Search

 

2N2855 datasheet

 9.1. Size:433K  rca

 2n2857.pdf pdf_icon

2N2855

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 9.2. Size:62K  central

 2n2857 2n3839.pdf pdf_icon

2N2855

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.3. Size:197K  semelab

 2n2857c1b.pdf pdf_icon

2N2855

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

 9.4. Size:196K  semelab

 2n2857c1.pdf pdf_icon

2N2855

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

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Detailed specifications: 2N2853, 2N2853-1, 2N2853-2, 2N2853-3, 2N2854, 2N2854-1, 2N2854-2, 2N2854-3, TIP32C, 2N2855-1, 2N2855-2, 2N2855-3, 2N2856, 2N2856-1, 2N2856-2, 2N2856-3, 2N2857

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