BD246C pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD246C Specs and Replacement

Type Designator: BD246C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 115 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO218

BD246C Substitution

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BD246C datasheet

..1. Size:217K inchange semiconductor

bd246 bd246a bd246b bd246c.pdf pdf_icon

isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -I = -10A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD246; -60V(Min)- BD246A (BR)CEO -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

9.1. Size:85K bourns

bd246-a-b-c.pdf pdf_icon

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maxi... See More ⇒

9.2. Size:91K power-innovations

bd246.pdf pdf_icon

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current 15 A Peak Collector Current 2 C Customer-Specified Selections Available 3 E Pin 2 is in... See More ⇒

9.3. Size:210K inchange semiconductor

bd246 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching... See More ⇒

Detailed specifications: BD245B , BD245C , BD245D , BD245E , BD245F , BD246 , BD246A , BD246B , TIP42 , BD246D , BD246E , BD246F , BD249 , BD249A , BD249B , BD249C , BD249D .