BD250C Datasheet. Specs and Replacement
Type Designator: BD250C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO218
BD250C Substitution
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BD250C datasheet
bd250 bd250a bd250b bd250c.pdf ![]()
SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE ... See More ⇒
bd250 bd250a bd250b bd250c.pdf ![]()
isc Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD249 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma... See More ⇒
Detailed specifications: BD249B, BD249C, BD249D, BD249E, BD249F, BD250, BD250A, BD250B, D965, BD250D, BD250E, BD250F, BD251, BD253, BD2530, BD253A, BD253B
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