All Transistors. BD250D Datasheet

 

BD250D Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD250D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO218

 BD250D Transistor Equivalent Substitute - Cross-Reference Search

   

BD250D Datasheet (PDF)

 9.1. Size:87K  bourns
bd250-a-b-c.pdf

BD250D
BD250D

BD250, BD250A, BD250B, BD250CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD249 Series 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma

 9.2. Size:131K  mospec
bd249 bd250.pdf

BD250D
BD250D

AAA

 9.3. Size:177K  cn sptech
bd250 bd250a bd250b bd250c.pdf

BD250D
BD250D

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE

 9.4. Size:122K  inchange semiconductor
bd250 a b c.pdf

BD250D
BD250D

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat

 9.5. Size:217K  inchange semiconductor
bd250 bd250a bd250b bd250c.pdf

BD250D
BD250D

isc Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top