2N2857CSM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2857CSM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: LCC3
2N2857CSM Transistor Equivalent Substitute - Cross-Reference Search
2N2857CSM Datasheet (PDF)
2n2857c1b.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
2n2857c1.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
2n2857c1a.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
Datasheet: 2N2855-1 , 2N2855-2 , 2N2855-3 , 2N2856 , 2N2856-1 , 2N2856-2 , 2N2856-3 , 2N2857 , BC547 , 2N2857QF , 2N2857UB , 2N2858 , 2N2859 , 2N285A , 2N285B , 2N2860 , 2N2861 .
