BD301B Specs and Replacement
Type Designator: BD301B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
BD301B Substitution
- BJT ⓘ Cross-Reference Search
BD301B datasheet
isc Silicon NPN Power Transistor BD301 DESCRIPTION DC Current Gain - h =30(Min.)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 45V(Min.) (BR)CEO Complement to Type BD302 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ... See More ⇒
Detailed specifications: BD291, BD292, BD293, BD294, BD295, BD296, BD301, BD301A, SS8050, BD302, BD302A, BD302B, BD303, BD303A, BD303B, BD304, BD304A
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