BD303A Datasheet and Replacement
Type Designator: BD303A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD303A Substitution
BD303A Datasheet (PDF)
bd303.pdf

isc Silicon NPN Power Transistor BD303DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type BD304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receivers.
Datasheet: BD296 , BD301 , BD301A , BD301B , BD302 , BD302A , BD302B , BD303 , 2SC2655 , BD303B , BD304 , BD304A , BD304B , BD306 , BD306A , BD306B , BD307 .
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