2N285B Specs and Replacement
Type Designator: 2N285B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 95 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO3
2N285B Substitution
- BJT ⓘ Cross-Reference Search
2N285B datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒
Detailed specifications: 2N2856-3, 2N2857, 2N2857CSM, 2N2857QF, 2N2857UB, 2N2858, 2N2859, 2N285A, 2N3904, 2N2860, 2N2861, 2N2862, 2N2863, 2N2864, 2N2865, 2N2866, 2N2867
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