All Transistors. BD314 Datasheet

 

BD314 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD314
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 BD314 Transistor Equivalent Substitute - Cross-Reference Search

   

BD314 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
 bd314.pdf

BD314 BD314

isc Silicon PNP Power Transistor BD314DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -5ACE(sat CComplement to Type BD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 6

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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