BD316 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD316
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD316 Transistor Equivalent Substitute - Cross-Reference Search
BD316 Datasheet (PDF)
..2. Size:207K inchange semiconductor
bd316.pdf
bd316.pdf
isc Silicon PNP Power Transistor BD316DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -8AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -8ACE(sat CComplement to Type BD315Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 1
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
