BD316 Specs and Replacement
Type Designator: BD316
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD316 Substitution
- BJT ⓘ Cross-Reference Search
BD316 datasheet
isc Silicon PNP Power Transistor BD316 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = -8A FE C Collector-Emitter Saturation Voltage- V )= -1.0 V(Max)@ I = -8A CE(sat C Complement to Type BD315 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 1... See More ⇒
Detailed specifications: BD307A, BD307B, BD311, BD312, BD312A-16, BD313, BD314, BD315, 2SA1015, BD317, BD318, BD320, BD320A, BD320B, BD320C, BD321, BD321A
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