BD317 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD317
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD317 Transistor Equivalent Substitute - Cross-Reference Search
BD317 Datasheet (PDF)
bd317.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BD317DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 8ACE(sat CComplement to Type BD318APPLICATIONSDesigned for high quality amplifiers operating up to 100 wattsinto 8 ohm load.ABSOLUTE MAXIMUM RATINGS(T =2
bd317.pdf
isc Silicon NPN Power Transistor BD317DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 8ACE(sat CComplement to Type BD318Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 100
Datasheet: BD307B , BD311 , BD312 , BD312A-16 , BD313 , BD314 , BD315 , BD316 , TIP142 , BD318 , BD320 , BD320A , BD320B , BD320C , BD321 , BD321A , BD321B .
