BD317 PDF and Equivalents Search

 

BD317 Specs and Replacement

Type Designator: BD317

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 BD317 Substitution

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BD317 datasheet

 ..1. Size:109K  motorola

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BD317

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 ..2. Size:165K  cn sptech

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BD317

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BD317 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 8A CE(sat C Complement to Type BD318 APPLICATIONS Designed for high quality amplifiers operating up to 100 watts into 8 ohm load. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 ..3. Size:205K  inchange semiconductor

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BD317

isc Silicon NPN Power Transistor BD317 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 8A CE(sat C Complement to Type BD318 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 100 ... See More ⇒

Detailed specifications: BD307B, BD311, BD312, BD312A-16, BD313, BD314, BD315, BD316, BC556, BD318, BD320, BD320A, BD320B, BD320C, BD321, BD321A, BD321B

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