BD331 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD331
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD331 Transistor Equivalent Substitute - Cross-Reference Search
BD331 Datasheet (PDF)
..3. Size:209K inchange semiconductor
bd331.pdf
bd331.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD331DESCRIPTIONHigh DC Current GainComplement to type BD332Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSNPN epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
