BD331 Specs and Replacement
Type Designator: BD331
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD331 Substitution
- BJT ⓘ Cross-Reference Search
BD331 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD331 DESCRIPTION High DC Current Gain Complement to type BD332 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BD322C , BD323 , BD323A , BD323B , BD323C , BD328 , BD329 , BD330 , BD222 , BD332 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 .
Keywords - BD331 pdf specs
BD331 cross reference
BD331 equivalent finder
BD331 pdf lookup
BD331 substitution
BD331 replacement
