All Transistors. BD331 Datasheet

 

BD331 Datasheet and Replacement


   Type Designator: BD331
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
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BD331 Datasheet (PDF)

 ..1. Size:427K  philips
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BD331

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BD331

 ..3. Size:209K  inchange semiconductor
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BD331

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD331DESCRIPTIONHigh DC Current GainComplement to type BD332Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSNPN epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

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