All Transistors. BD333 Datasheet

 

BD333 Datasheet and Replacement


   Type Designator: BD333
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
 

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BD333 Datasheet (PDF)

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BD333

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BD333

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BD333

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD333DESCRIPTIONHigh DC Current GainComplement to type BD334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSNPN epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: BD323A , BD323B , BD323C , BD328 , BD329 , BD330 , BD331 , BD332 , BD139 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , BD343 , BD344 .

History: 2N1832 | 2SC2608 | MJE102 | 2N6066 | BD135-10 | BD343 | 2N6031

Keywords - BD333 transistor datasheet

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