BD333 Specs and Replacement
The BD333 is a silicon NPN power transistor designed for medium-power switching. It typically features a collector-emitter voltage rating around 80V and a continuous collector current of approximately 6A, making it suitable for motor drivers, power supplies, audio stages. Housed in a TO126 package, it offers efficient heat dissipation and stable gain across temperature ranges. Its rugged design supports reliable operation in demanding industrial and consumer electronics applications.
Type Designator: BD333
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD333 Substitution
- BJT ⓘ Cross-Reference Search
BD333 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD333 DESCRIPTION High DC Current Gain Complement to type BD334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BD323A , BD323B , BD323C , BD328 , BD329 , BD330 , BD331 , BD332 , 2SC5200 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , BD343 , BD344 .
History: 2SC484Y
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