BD333 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD333
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD333 Transistor Equivalent Substitute - Cross-Reference Search
BD333 Datasheet (PDF)
..3. Size:209K inchange semiconductor
bd333.pdf
bd333.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD333DESCRIPTIONHigh DC Current GainComplement to type BD334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSNPN epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1375
