All Transistors. BD350 Datasheet

 

BD350 Datasheet and Replacement


   Type Designator: BD350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BD350 Datasheet (PDF)

 ..1. Size:182K  inchange semiconductor
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BD350

INCHANGE Semiconductorisc Silicon PNP Power Transistors BD350DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -15ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1954 | 2SD792 | 2N5811 | BT2944 | CTP3551 | 2SA778 | 2SC3560

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