BD350 Specs and Replacement
Type Designator: BD350
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 180 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BD350 Substitution
- BJT ⓘ Cross-Reference Search
BD350 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistors BD350 DESCRIPTION Low Collector Saturation Voltage- V = -1.0V(Max.)@ I = -15A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: BD342 , BD343 , BD344 , BD345 , BD346 , BD347 , BD348 , BD349 , S8050 , BD350A , BD350B , BD351 , BD351A , BD351B , BD354 , BD354A , BD354B .
History: BD350B
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