BD350A Datasheet, Equivalent, Cross Reference Search
Type Designator: BD350A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BD350A Transistor Equivalent Substitute - Cross-Reference Search
BD350A Datasheet (PDF)
9.1. Size:182K inchange semiconductor
bd350.pdf
bd350.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors BD350DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -15ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD371B-16
