BD354 Datasheet and Replacement
Type Designator: BD354
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
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BD354 Datasheet (PDF)
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bd354.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD354DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 2ACE(sat CExcellent Safe Operating AreaComplement to Type BD355Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1064 | BD501 | MUN2135T1G | BD536J | 2SA1537F | BDW93FI | CMST5087
Keywords - BD354 transistor datasheet
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History: 2SB1064 | BD501 | MUN2135T1G | BD536J | 2SA1537F | BDW93FI | CMST5087



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