BD354 Specs and Replacement
Type Designator: BD354
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO66
BD354 Substitution
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BD354 datasheet
kd135 kd136 kd137 kd138 kd139 kd140 bc211 bc313 bd354 bd355 kd333 kd334 kd335 kd336 kd337 kd338.pdf 
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INCHANGE Semiconductor isc Silicon NPN Power Transistor BD354 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 2A CE(sat C Excellent Safe Operating Area Complement to Type BD355 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for ... See More ⇒
Detailed specifications: BD348, BD349, BD350, BD350A, BD350B, BD351, BD351A, BD351B, TIP3055, BD354A, BD354B, BD354C, BD355, BD355A, BD355B, BD355C, BD356
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