All Transistors. BD354 Datasheet

 

BD354 Datasheet and Replacement


   Type Designator: BD354
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66
 

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BD354 Datasheet (PDF)

 ..1. Size:132K  tesla
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BD354

 ..2. Size:199K  inchange semiconductor
 bd354.pdf pdf_icon

BD354

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD354DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 2ACE(sat CExcellent Safe Operating AreaComplement to Type BD355Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for

Datasheet: BD348 , BD349 , BD350 , BD350A , BD350B , BD351 , BD351A , BD351B , 13009 , BD354A , BD354B , BD354C , BD355 , BD355A , BD355B , BD355C , BD356 .

History: 2SD216 | PBRN113ZT | 2SC3994 | 2SA1048LG | BD897 | ST2SA683 | 2SC3552O

Keywords - BD354 transistor datasheet

 BD354 cross reference
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