BD355B Specs and Replacement
Type Designator: BD355B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO66
BD355B Substitution
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BD355B datasheet
kd135 kd136 kd137 kd138 kd139 kd140 bc211 bc313 bd354 bd355 kd333 kd334 kd335 kd336 kd337 kd338.pdf 
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INCHANGE Semiconductor isc Silicon PNP Power Transistor BD355 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Saturation Voltage- V )= -1.0V(Max)@ I = -2.0A CE(sat C Excellent Safe Operating Area Complement to Type BD354 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pu... See More ⇒
Detailed specifications: BD351A, BD351B, BD354, BD354A, BD354B, BD354C, BD355, BD355A, A1941, BD355C, BD356, BD357, BD358, BD359, BD361, BD361A, BD362
Keywords - BD355B pdf specs
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