BD365 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD365
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD365 Transistor Equivalent Substitute - Cross-Reference Search
BD365 Datasheet (PDF)
..1. Size:197K inchange semiconductor
bd365.pdf
bd365.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors BD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD364100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andind
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
