BD379 Datasheet. Specs and Replacement
Type Designator: BD379 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO126
BD379 Substitution
- BJT ⓘ Cross-Reference Search
BD379 datasheet
BD375/377/379 Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD375 50 V BD377 75 V BD379 100 V VCEO Collector-Emitter Voltage BD375... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION DC Current Gain- hFE= 20(Min)@ IC= 1A Complement to Type BD376/378/380 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD375 50 VCBO Collector-Base Voltage BD377 75 V ... See More ⇒
Detailed specifications: BD377-16, BD377-25, BD377-6, BD378, BD378-10, BD378-16, BD378-25, BD378-6, S9014, BD379-10, BD379-16, BD379-25, BD379-6, BD380, BD380-10, BD380-16, BD380-25
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