BD379-16 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD379-16
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
BD379-16 Transistor Equivalent Substitute - Cross-Reference Search
BD379-16 Datasheet (PDF)
bd375 bd377 bd379.pdf
BD375/377/379Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD375 50 V : BD377 75 V : BD379 100 V VCEO Collector-Emitter Voltage : BD375
hsbd379.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD379 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25
bd375 bd377 bd379.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION DC Current Gain- : hFE= 20(Min)@ IC= 1A Complement to Type BD376/378/380 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD375 50 VCBO Collector-Base Voltage BD377 75 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
