BD646 Datasheet. Specs and Replacement

Type Designator: BD646  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 BD646 Substitution

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BD646 datasheet

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BD646

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 ..2. Size:193K  inchange semiconductor

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BD646

isc Silicon PNP Darlington Power Transistor BD646 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD645 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒

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BD646

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 0.2. Size:214K  inchange semiconductor

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BD646

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD646F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD645F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage... See More ⇒

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Detailed specifications: BD637, BD638, BD643, BD643F, BD644, BD644F, BD645, BD645F, BD139, BD646F, BD647, BD647F, BD648, BD648F, BD649, BD649F, BD650

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