All Transistors. BD647F Datasheet

 

BD647F Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD647F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220F

 BD647F Transistor Equivalent Substitute - Cross-Reference Search

   

BD647F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
bd647f.pdf

BD647F
BD647F

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BD647FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BD648FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.1. Size:331K  comset
bd643-bd645-bd647-bd649-bd651.pdf

BD647F
BD647F

SEMICONDUCTORSBD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 9.2. Size:115K  power-innovations
bd645 bd647 bd649 bd651.pdf

BD647F
BD647F

BD645, BD647, BD649, BD651NPN SILICON POWER DARLINGTONSCopyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652TO-220 PACKAGE(TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1C 2 Minimum hFE of 750 at 3 V, 3 AE 3Pin 2 is in electrical contact with the mo

 9.3. Size:192K  inchange semiconductor
bd647.pdf

BD647F
BD647F

isc Silicon NPN Darlington Power Transistor BD647DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD648Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputst

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BLW38 | BT3906T | 2SD2271 | BDW51B | GSTMMBT2222A | 2N1926

 

 
Back to Top