BD648F Specs and Replacement
Type Designator: BD648F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
BD648F Transistor Equivalent Substitute - Cross-Reference Search
BD648F detailed specifications
bd648f.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD648F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD649F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage... See More ⇒
bd644-bd646-bd648-bd650-bd652.pdf
SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒
bd648.pdf
isc Silicon PNP Darlington Power Transistor BD648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD647 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒
Detailed specifications: BD644F , BD645 , BD645F , BD646 , BD646F , BD647 , BD647F , BD648 , C1815 , BD649 , BD649F , BD650 , BD650F , BD651 , BD651F , BD652 , BD652F .
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