All Transistors. BD649 Datasheet

 

BD649 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BD649 Transistor Equivalent Substitute - Cross-Reference Search

   

BD649 Datasheet (PDF)

 ..1. Size:115K  power-innovations
bd645 bd647 bd649 bd651.pdf

BD649 BD649

BD645, BD647, BD649, BD651NPN SILICON POWER DARLINGTONSCopyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652TO-220 PACKAGE(TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1C 2 Minimum hFE of 750 at 3 V, 3 AE 3Pin 2 is in electrical contact with the mo

 ..2. Size:194K  inchange semiconductor
bd649.pdf

BD649 BD649

isc Silicon NPN Darlington Power Transistor BD649DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD650Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputs

 0.1. Size:331K  comset
bd643-bd645-bd647-bd649-bd651.pdf

BD649 BD649

SEMICONDUCTORSBD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 0.2. Size:213K  inchange semiconductor
bd649f.pdf

BD649 BD649

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BD649FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BD650FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: FMMTA43R | BD434-10

 

 
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