BD649 Datasheet and Replacement

BD645, BD647, BD649, BD651NPN SILICON POWER DARLINGTONSCopyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652TO-220 PACKAGE(TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1C 2 Minimum hFE of 750 at 3 V, 3 AE 3Pin 2 is in electrical contact with the mo

isc Silicon NPN Darlington Power Transistor BD649DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD650Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputs

SEMICONDUCTORSBD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BD649FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BD650FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM