All Transistors. BD650F Datasheet

 

BD650F Datasheet and Replacement


   Type Designator: BD650F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220F
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BD650F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
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BD650F

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD650FDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD649FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstag

 9.1. Size:363K  comset
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BD650F

SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 9.2. Size:452K  transys
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BD650F

 9.3. Size:195K  inchange semiconductor
 bd650.pdf pdf_icon

BD650F

isc Silicon PNP Darlington Power Transistor BD650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output

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History: 2SD146F | EMX3FHA | MJ2249 | ZTX108 | MSD42 | ZTX753DCSM | GES6000

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