BD651 Datasheet. Specs and Replacement

Type Designator: BD651  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 BD651 Substitution

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BD651 datasheet

 ..1. Size:115K  power-innovations

bd645 bd647 bd649 bd651.pdf pdf_icon

BD651

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25 C Case Temperature 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3 V, 3 A E 3 Pin 2 is in electrical contact with the mo... See More ⇒

 ..2. Size:194K  inchange semiconductor

bd651.pdf pdf_icon

BD651

isc Silicon NPN Darlington Power Transistor BD651 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD652 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output s... See More ⇒

 0.1. Size:331K  comset

bd643-bd645-bd647-bd649-bd651.pdf pdf_icon

BD651

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 0.2. Size:213K  inchange semiconductor

bd651f.pdf pdf_icon

BD651

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD651F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD652F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

Detailed specifications: BD647, BD647F, BD648, BD648F, BD649, BD649F, BD650, BD650F, C5198, BD651F, BD652, BD652F, BD661, BD661K, BD662, BD662K, BD663

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