2N2897 Datasheet and Replacement
   Type Designator: 2N2897
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5
 W
   Maximum Collector-Base Voltage |Vcb|: 60
 V
   Maximum Collector-Emitter Voltage |Vce|: 45
 V
   Maximum Emitter-Base Voltage |Veb|: 7
 V
   Maximum Collector Current |Ic max|: 1
 A
   Max. Operating Junction Temperature (Tj): 200
 °C
   Transition Frequency (ft): 100
 MHz
   Collector Capacitance (Cc): 15
 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
		   Package: 
TO18
				
				  
				 
   - 
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2N2897 Datasheet (PDF)
 9.6.  Size:10K  semelab
 2n2894a.pdf 
						 
2N2894ADimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019)0.41 (0.016)dia.IC = 0.2A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
 9.7.  Size:274K  semelab
 2n2894ac1a.pdf 
						 
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1  Hermetic Ceramic Surface Mount Package (SOT23 Compatible)  Silicon Planar Epitaxial PNP Transistor  High Speed low Saturation Switching  Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector  Base Voltage -12V VCEO Collecto
 9.8.  Size:15K  semelab
 2n2894.pdf 
						 
2N2894PNP SILICON MECHANICAL DATADimensions in mm (inches) TRANSISTOR 5.84 (0.230)5.31 (0.209)FEATURES4.95 (0.195)4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCHAPPLICATIONS:0.48 (0.019)GENERAL PURPOSE SWITCHING0.41 (0.016)dia.APPLICATIONS2.54 (0.100)Nom.3 12TO18Underside ViewPIN1  EMITER PIN 2  BASE PIN 3  COLLE
 9.9.  Size:225K  semelab
 2n2896x.pdf 
						 
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X  High Voltage  Hermetic TO-18 Metal package.  Ideally suited for General Purpose Amplifier Applications  Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector  Base Voltage 140V VCEO Collector  Emitter Voltage 90V VCER Collector  Emitter Voltage 140
 9.10.  Size:250K  semelab
 2n2891smd05.pdf 
						 
SILICON NPN TRANSISTOR 2N2891SMD05  V(BR)CEO = 80V (Min).  Hermetic Ceramic Surface Mount Package  Ideally Suited For Low Frequency Large Signal Applications (High Voltage).  Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector  Base Voltage 100V VCEO Collector  Emitter Voltage 80V VEBO Emitter 
 9.11.  Size:10K  semelab
 2n2895.pdf 
						 
2N2895Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX
 9.12.  Size:274K  semelab
 2n2894ac1b.pdf 
						 
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1  Hermetic Ceramic Surface Mount Package (SOT23 Compatible)  Silicon Planar Epitaxial PNP Transistor  High Speed low Saturation Switching  Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector  Base Voltage -12V VCEO Collecto
 9.13.  Size:19K  semelab
 2n2896csm4.pdf 
						 
2N2896CSM4MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR1.40  0.155.59  0.13(0.055  0.006)(0.22  0.005)0.25  0.03(0.01  0.001)FEATURES0.23rad.(0.009)3 20.23  NPN High Voltage Planar Transistor4 1min.(0.009) Hermetic Ceramic Surface Mount1.02  0.20 2.03  0.20Package(0.04  0.008) (0.08  0.008) Full Screenin
 9.14.  Size:33K  semelab
 2n2894adcsm.pdf 
						 
2N2894ADCSMDUAL HIGH SPEED, MEDIUM POWERPNP GENERAL PURPOSE TRANSISTORIN A HERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FEATURES SILICON PLANAR EPITAXIAL DUAL PNP2.29  0.20 1.65  0.13 1.40  0.15(0.09  0.008) (0.065  0.005) (0.055  0.006)TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT2 3PACKAGE 1 4 CECC SCR
 9.15.  Size:11K  semelab
 2n2891.pdf 
						 
2N2891Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 
Datasheet: 2N2894
, 2N2894A
, 2N2894ACSM
, 2N2894AQF
, 2N2894CSM
, 2N2894DCSM
, 2N2895
, 2N2896
, 2SD2499
, 2N2898
, 2N2899
, 2N29
, 2N290
, 2N2900
, 2N2902
, 2N2903
, 2N2903A
. 
Keywords - 2N2897 transistor datasheet
 2N2897 cross reference
 2N2897 equivalent finder
 2N2897 lookup
 2N2897 substitution
 2N2897 replacement
 
 
