All Transistors. BD680H Datasheet

 

BD680H Datasheet and Replacement


   Type Designator: BD680H
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: ISO126
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BD680H Datasheet (PDF)

 9.1. Size:110K  motorola
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BD680H

Order this documentMOTOROLAby BD676/DSEMICONDUCTOR TECHNICAL DATABD676BD676APlastic Medium-PowerBD678Silicon PNP DarlingtonsBD678A. . . for use as output devices in complementary generalpurpose amplifier applica-BD680tions. High DC Current Gain BD680AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD682 BD676, 676A, 678, 678A, 680

 9.2. Size:87K  st
bd677a bd679a bd681 bd678a bd680a bd682.pdf pdf_icon

BD680H

BD677/A/679/A/681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION LINEAR AND SWITCHING INDUSTRIAL12EQUIPMENT3SOT-32DESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epi

 9.3. Size:41K  st
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf pdf_icon

BD680H

BD677/A/679/A681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epitaxial-base NPN powertransistors in monolithic Darlington configurationmounted in Jedec SOT-32 plastic package.They are intended for use in medium power linarand switching applications12

 9.4. Size:42K  fairchild semi
bd676a bd678a bd680a bd682.pdf pdf_icon

BD680H

BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BCP56-10T1 | 2SB447 | BCM846S | 2SB515D | BCP55TA | 2SB515E | BCP55-10T3

Keywords - BD680H transistor datasheet

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